Search results for "Schottky barrier"
showing 10 items of 41 documents
Formation and Rupture of Schottky Nanocontacts on ZnO Nanocolumns
2007
In this paper, the electrical transport and mechanical properties of Pt/ZnO Schottky nanocontacts have been studied simultaneously during the formation and rupture of the nanocontacts. By combining multidimensional conducting scanning force spectroscopy with appropriated data processing, the physical relevant parameters (the ideality factor, the Schottky barrier height, and the rupture voltage) are obtained. It has been found that the transport curves strongly depend on the loading force. For loading forces higher than a threshold value, the transport characteristics are similar to those of large-area Schottky contact, while below this threshold deviations from strictly thermionic emission …
Electrical Characterization of CdTe pixel detectors with Al Schottky anode
2014
Abstract Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage ( I–V ) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe con…
Nanoscale inhomogeneity of the Schottky barrier and resistivity inMoS2multilayers
2015
Conductive atomic force microscopy (CAFM) is employed to investigate the current injection from a nanometric contact (a Pt coated tip) to the surface of ${\text{MoS}}_{2}$ thin films. The analysis of local current-voltage characteristics on a large array of tip positions provides high spatial resolution information on the lateral homogeneity of the $\mathrm{tip}/{\text{MoS}}_{2}$ Schottky barrier ${\mathrm{\ensuremath{\Phi}}}_{B}$ and ideality factor $n$, and on the local resistivity ${\ensuremath{\rho}}_{\text{loc}}$ of the ${\text{MoS}}_{2}$ region under the tip. Here, ${\mathrm{\ensuremath{\Phi}}}_{B}=300\ifmmode\pm\else\textpm\fi{}24\phantom{\rule{0.28em}{0ex}}\text{meV}, n=1.60\ifmmode…
Amorphous semiconductor—electrolyte junction. Energetics at the a-WO3—electrolyte junction
1991
In order to elucidate the influence of thickness and amorphous structure on the kinetics of electron exchange with redox couples in solution, a critical re-examination of the energetics at the amorphous anodic WO3 films (a-WO3)—electrolyte junction has been performed, based on a recent theory of amorphous semiconductor (a-SC) Schottky barrier. The admittance study of the barrier performed in a large interval of electrode potential at changing frequency and film thickness allowed the determination of the energy levels as well as the distribution of localized electronic states within the mobility gap of the films. The new energetic picture derived is able to explain some features of the kinet…
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
The photoelectrochemistry of thin passive layers. Investigation of anodic oxide films on titanium metal
1993
Abstract A photoelectrochemical investigation has been performed on thin TiO2 films grown anodically in 0.5 M H2SO4 solution at high growth rates. The shape of the photocurrent vs. potential curves under monochromatic irradiation (photocharacteristics) depends on the photon energy of the incident light at energies above the optical band gap of the films (3.25 ± 0.05 eV). This finding has been explained by considering the presence of geminate recombination of the photogenerated electron-hole pairs. In order to fit the experimental photocharacteristics, an expression for the photocurrent is proposed which takes into account the low drift range of photocarriers and possible recombination in th…
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
2019
Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.
Amorphous semiconductor—electrolyte junction. Impedance study on the a-Nb2 O5—electrolyte junction
1990
Abstract A systematic study of the impedance behaviour of the anodic niobium oxide film/aqueous electrolyte interface was carried out using the lock-in technique at different signal frequencies. The dependence of both components of the impedance on the electrode potential and on frequency is analysed by taking into account the amorphous nature of the films. The lack of long-range order in these oxide layers modifies the physical picture in respect to the case of single crystal semiconductors. A new equivalent circuit has been assumed, based on recent theory of an amorphous semiconductor Schottky barrier. Such a new approach allows the characterization of the interface and the determination …
Electrical and photoelectrical measurements on ZnO-Nanowires coated with PEDOT:PSS for Dye-Sensitized Solar Cells
2011
ABSTRACTDye-sensitized solar cells composed of an n-doped ZnO nanowire array and a p-doped polymer layer appears to be a promising candidate for low-cost production of environment-friendly solar cells. In this work, we investigate hybrid devices consisting of a transparent conducting oxide (TCO) substrate, ZnO-nanowires (ZnO-NW) or a sol-gel prepared ZnO layer, a ruthenium dye (N719) and a PEDOT:PSS or P3HT layer. The dense polycrystalline ZnO layer is able to prevent short circuits, which have a strong effect on the performance of the solar cells. This is demonstrated by the use of only the ZnO layer which improves the open circuit voltage by a factor of 2 and the efficiency by a factor of…
Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes
2016
Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.